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PD - 94149A
IRF3205S
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Advanced Process Technology
IRF3205L
HEXFET ? Power MOSFET
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Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
G
D
S
V DSS = 55V
R DS(on) = 8.0m ?
I D = 110A ?
Description
Advanced HEXFET ? Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D 2 Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing surface
mount package. The D 2 Pak is suitable for high current applications
because of its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF3205L) is available for low-profile
applications.
Absolute Maximum Ratings
Parameter
D 2 Pak
IRF3205S
Max.
TO-262
IRF3205L
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
110 ?
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ?
80
390
200
1.3
± 20
62
20
5.0
A
W
W/°C
V
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
-55 to + 175
300 (1.6mm from case )
10 lbf?in (1.1N?m)
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient (PCB mounted, steady-state) *
–––
–––
0.75
40
°C/W
www.irf.com
1
09/06/02
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